RES 680 OHM 1/10W 1% AXIAL
MOSFET N-CH 550V 31A TO247-3
TERM BLK MIDDLE 2POS 5.2MM BLUE
Type | Description |
---|---|
Series: | POWER MOS 7® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 550 V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 180mOhm @ 15.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 67 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3286 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 403W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMP2066LVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.5A TSOT26 |
|
IPI120N06S402AKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO262-3 |
|
SI3458DV-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 3.2A 6TSOP |
|
SI5499DC-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 6A 1206-8 CHIPFET |
|
RJK0603DPN-E0#T2Renesas Electronics America |
MOSFET N-CH 60V 80A TO220AB |
|
IPB60R520CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6.8A D2PAK |
|
SIE726DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A 10POLARPAK |
|
BSP149L6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
APT5010JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 500V 41A ISOTOP |
|
NTP75N06GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A TO220AB |
|
IRF6641TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 4.6A DIRECTFET |
|
BSP320S E6433IR (Infineon Technologies) |
MOSFET N-CH 60V 2.9A SOT223-4 |
|
FQD4N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.2A DPAK |