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IRF6641TR1PBF

IRF6641TR1PBF

MOSFET N-CH 200V 4.6A DIRECTFET

IRF6641TR1PBF

IRF6641TR1PBF

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Part No :

IRF6641TR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 4.6A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
172417 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
IRF6641TR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Ta), 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:59.9mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2290 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MZ
Package / Case:DirectFET™ Isometric MZ
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