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BSB012N03LX3 G

BSB012N03LX3 G

MOSFET N-CH 30V 39A/180A 2WDSON

TVP00RQDZ-23-6SC

TVP00RQDZ-23-6SC

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BSB012N03LX3 G

BSB012N03LX3 G

Image is for reference, please contact us to get the real picture

Part No :

BSB012N03LX3 G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 39A/180A 2WDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
772377 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 20 - Feb 24 2025
PDF
BSB012N03LX3 G PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:169 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16900 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
BSB012N03LX3 G is available at GangBo-ic.com, Please review product page below for detailed information, including BSB012N03LX3 G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSB012N03LX3 G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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