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IPI11N03LA

IPI11N03LA

MOSFET N-CH 25V 30A TO262-3

IPI11N03LA

IPI11N03LA

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Part No :

IPI11N03LA

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 30A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
902390 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
IPI11N03LA PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1358 pF @ 15 V
FET Feature:-
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI11N03LA is available at GangBo-ic.com, Please review product page below for detailed information, including IPI11N03LA price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI11N03LA to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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