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IRF6601

IRF6601

MOSFET N-CH 20V 26A DIRECTFET

IRF6601

IRF6601

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Part No :

IRF6601

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 20V 26A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
292329 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 27 - Oct 01 2024
PDF
IRF6601 PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:26A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3440 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 42W (Tc)
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MT
Package / Case:DirectFET™ Isometric MT
IRF6601 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6601 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6601 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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