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IRF1310NSTRR

IRF1310NSTRR

MOSFET N-CH 100V 42A D2PAK

IRF1310NSTRR

IRF1310NSTRR

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Part No :

IRF1310NSTRR

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 42A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
422342 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 27 - Oct 01 2024
PDF
IRF1310NSTRR PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:36mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 160W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF1310NSTRR is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1310NSTRR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1310NSTRR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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