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SI5406DC-T1-GE3

SI5406DC-T1-GE3

MOSFET N-CH 12V 6.9A 1206-8

SI5406DC-T1-GE3

SI5406DC-T1-GE3

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Part No :

SI5406DC-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 12V 6.9A 1206-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
612161 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SI5406DC-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:20mOhm @ 6.9A, 4.5V
Vgs(th) (Max) @ Id:600mV @ 1.2mA (Min)
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:1206-8 ChipFET™
Package / Case:8-SMD, Flat Lead
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