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2SK3309(Q)

2SK3309(Q)

MOSFET N-CH 450V 10A TO220FL

2SK3309(Q)

2SK3309(Q)

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Part No :

2SK3309(Q)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 450V 10A TO220FL
Catalog
Transistors - FETs, MOSFETs - Single
Availability
652165 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
2SK3309(Q) PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):450 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 10 V
FET Feature:-
Power Dissipation (Max):65W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FL
Package / Case:TO-220-3, Short Tab
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