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SI7703EDN-T1-GE3

SI7703EDN-T1-GE3

MOSFET P-CH 20V 4.3A PPAK1212-8

SI7703EDN-T1-GE3

SI7703EDN-T1-GE3

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Part No :

SI7703EDN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 4.3A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
502150 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
SI7703EDN-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:48mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 800µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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