Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 200mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 61 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
FQAF33N10LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 25.8A TO3PF |
![]() |
FDD10AN06A0-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11A TO252AA |
![]() |
IXTH88N15Wickmann / Littelfuse |
MOSFET N-CH 150V 88A TO247 |
![]() |
IPD600N25N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 25A TO252-3 |
![]() |
SI4346DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 5.9A 8SO |
![]() |
NTF3055L108T3LFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
![]() |
IRL3715TRRIR (Infineon Technologies) |
MOSFET N-CH 20V 54A TO220AB |
![]() |
AON6368PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 25A DFN |
![]() |
IRFS31N20DTRRIR (Infineon Technologies) |
MOSFET N-CH 200V 31A D2PAK |
![]() |
BSS340NWH6327XTSA1IR (Infineon Technologies) |
SMALL SIGNAL+P-CH |
![]() |
IRF7433TRIR (Infineon Technologies) |
MOSFET P-CH 12V 8.9A 8SO |
![]() |
IRF7749L2TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 33A DIRECTFET |
![]() |
IRFI7446GPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220AB FP |