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IRFS31N20DTRR

IRFS31N20DTRR

MOSFET N-CH 200V 31A D2PAK

IRFS31N20DTRR

IRFS31N20DTRR

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Part No :

IRFS31N20DTRR

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 31A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12100 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IRFS31N20DTRR PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2370 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS31N20DTRR is available at GangBo-ic.com, Please review product page below for detailed information, including IRFS31N20DTRR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFS31N20DTRR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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