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IRF8302MTR1PBF

IRF8302MTR1PBF

Image is for reference, please contact us to get the real picture

Part No :

IRF8302MTR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N CH 30V 31A MX
Catalog
Transistors - FETs, MOSFETs - Single
Availability
672067 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IRF8302MTR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6030 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 104W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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