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IRF8302MTR1PBF

IRF8302MTR1PBF

MOSFET N CH 30V 31A MX

IRF8302MTR1PBF

IRF8302MTR1PBF

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Part No :

IRF8302MTR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N CH 30V 31A MX
Catalog
Transistors - FETs, MOSFETs - Single
Availability
672067 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IRF8302MTR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6030 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 104W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
IRF8302MTR1PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF8302MTR1PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF8302MTR1PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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