MOSFET P-CH 30V 4A 8SOIC
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 68mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350 pF @ 15 V |
FET Feature: | Schottky Diode (Body) |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NDC651NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 3.2A SUPERSOT6 |
|
BSS159NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 230MA SOT23-3 |
|
SPP16N50C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 560V 16A TO220-3 |
|
SIA811DJ-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 4.5A PPAK SC70-6 |
|
IXTN21N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 21A SOT227B |
|
AOD4136Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 25V 25A TO252 |
|
IXTA220N055TWickmann / Littelfuse |
MOSFET N-CH 55V 220A TO263 |
|
AO4413Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A 8SOIC |
|
NTD5807NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 23A DPAK |
|
IRFU5305IR (Infineon Technologies) |
MOSFET P-CH 55V 31A IPAK |
|
SPD30N03S2L-20IR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
|
SPB80N06S08ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
RJK0703DPP-E0#T2Renesas Electronics America |
MOSFET N-CH 75V 70A TO220FP |