RES 7.06K OHM 1/8W .1% AXIAL
MOSFET N-CH 600V 11A TO263
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 700mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 37 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1990 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 272W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D²Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RSS105N03TBROHM Semiconductor |
MOSFET N-CH 30V 10.5A 8SOP |
|
IPP03N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO220-3 |
|
FDB7030L_L86ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 80A TO263AB |
|
SIHB22N60S-GE3Vishay / Siliconix |
MOSFET N-CH 600V 22A D2PAK |
|
SI8415DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 12V 5.3A 4MICROFOOT |
|
IXTH120N15TWickmann / Littelfuse |
MOSFET N-CH 150V 120A TO247 |
|
AUIRLL024ZIR (Infineon Technologies) |
MOSFET N-CH 55V 5A SOT223 |
|
IRF520NSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 9.7A D2PAK |
|
2N6661JAN02Vishay / Siliconix |
MOSFET N-CH 90V 860MA TO39 |
|
FQPF5N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.5A TO220F |
|
MCH6331-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3.5A 6MCPH |
|
2SK3481-AZRenesas Electronics America |
MOSFET N-CH 100V 30A TO220AB |
|
STD22NM20NT4STMicroelectronics |
MOSFET N-CH 200V 22A DPAK |