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2N6661JAN02

2N6661JAN02

MOSFET N-CH 90V 860MA TO39

2N6661JAN02

2N6661JAN02

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Part No :

2N6661JAN02

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 90V 860MA TO39
Catalog
Transistors - FETs, MOSFETs - Single
Availability
481548 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
2N6661JAN02 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):90 V
Current - Continuous Drain (Id) @ 25°C:860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:-
Power Dissipation (Max):725mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-39
Package / Case:TO-205AD, TO-39-3 Metal Can
2N6661JAN02 is available at GangBo-ic.com, Please review product page below for detailed information, including 2N6661JAN02 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N6661JAN02 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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