MOSFET N-CH 500V 34A SUPER247
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 145mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 230 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 5580 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 450W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | SUPER-247™ (TO-274AA) |
Package / Case: | TO-274AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPD60R950C6IR (Infineon Technologies) |
MOSFET N-CH 600V 4.4A TO252-3 |
|
PHB153NQ08LT,118NXP Semiconductors |
MOSFET N-CH 75V 75A D2PAK |
|
SPP20N65C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.7A TO220-3 |
|
NP100P06PLG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 100A TO263 |
|
SI7664DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
NTB30N20GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 30A D2PAK |
|
IRFB4215IR (Infineon Technologies) |
MOSFET N-CH 60V 115A TO220AB |
|
IRFBE30SVishay / Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
|
UPA2812T1L-E1-ATRenesas Electronics America |
MOSFET P-CH 30V 30A 8HVSON |
|
SI4322DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 18A 8SO |
|
TK40P03M1(T6RDS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 40A DPAK |
|
IXFN100N10S1Wickmann / Littelfuse |
MOSFET N-CH 100V 100A SOT-227B |
|
IRLR014NTRIR (Infineon Technologies) |
MOSFET N-CH 55V 10A DPAK |