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IRFBE30S

IRFBE30S

MOSFET N-CH 800V 4.1A D2PAK

IRFBE30S

IRFBE30S

Image is for reference, please contact us to get the real picture

Part No :

IRFBE30S

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 800V 4.1A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
201520 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 21 - Feb 25 2025
PDF
IRFBE30S PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFBE30S is available at GangBo-ic.com, Please review product page below for detailed information, including IRFBE30S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFBE30S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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