MOSFET N-CH 900V 11A TO3P
Type | Description |
---|---|
Series: | QFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.1Ohm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 80 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3290 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTB18N06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK |
|
IPB048N06LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A D2PAK |
|
IRF3711ZCSIR (Infineon Technologies) |
MOSFET N-CH 20V 92A D2PAK |
|
IPP052N06L3GHKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO220-3 |
|
STB13NM50N-1STMicroelectronics |
MOSFET N-CH 500V 12A I2PAK |
|
IRF7493TRIR (Infineon Technologies) |
MOSFET N-CH 80V 9.3A 8SO |
|
IRL3715ZCLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 50A TO262 |
|
NVMFS5C450NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
IRF6610TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 15A DIRECTFET |
|
2N7002-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 115MA SOT23-3 |
|
SI4406DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 13A 8SO |
|
IRFZ44ESTRLIR (Infineon Technologies) |
MOSFET N-CH 60V 48A D2PAK |
|
AO4494HAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 18A 8SO |