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IPB048N06LGATMA1

IPB048N06LGATMA1

MOSFET N-CH 60V 100A D2PAK

IPB048N06LGATMA1

IPB048N06LGATMA1

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Part No :

IPB048N06LGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 100A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
821482 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
IPB048N06LGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:225 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7600 pF @ 30 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB048N06LGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB048N06LGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB048N06LGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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