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IRF630NLPBF

IRF630NLPBF

MOSFET N-CH 200V 9.3A TO262

IRF630NLPBF

IRF630NLPBF

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Part No :

IRF630NLPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 9.3A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
071407 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 23 - Sep 27 2024
PDF
IRF630NLPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:575 pF @ 25 V
FET Feature:-
Power Dissipation (Max):82W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRF630NLPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF630NLPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF630NLPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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