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IPI120N06S4H1AKSA2

IPI120N06S4H1AKSA2

MOSFET N-CH 60V 120A TO262-3

IPI120N06S4H1AKSA2

IPI120N06S4H1AKSA2

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Part No :

IPI120N06S4H1AKSA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 120A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
151415 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 23 - Sep 27 2024
PDF
IPI120N06S4H1AKSA2 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:21900 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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