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IPI120N06S4H1AKSA2

IPI120N06S4H1AKSA2

MOSFET N-CH 60V 120A TO262-3

IPI120N06S4H1AKSA2

IPI120N06S4H1AKSA2

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Part No :

IPI120N06S4H1AKSA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 120A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
151415 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 05 - Dec 09 2024
PDF
IPI120N06S4H1AKSA2 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:21900 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI120N06S4H1AKSA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPI120N06S4H1AKSA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI120N06S4H1AKSA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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