MOSFET N-CH 200V 660MA SOT223-4
Type | Description |
---|---|
Series: | SIPMOS® |
Package: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 660mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Rds On (Max) @ Id, Vgs: | 1.8Ohm @ 660mA, 10V |
Vgs(th) (Max) @ Id: | 1V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 430 pF @ 25 V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 1.8W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT223-4 |
Package / Case: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RJK0603DPN-A0#T2Renesas Electronics America |
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