MOSFET N-CH 500V 23A TO247-3
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 235mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 150 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3600 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 370W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM3K106TU(TE85L)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 1.2A UFM |
|
IRF6893MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 29A DIRECTFET |
|
SIR412DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 20A PPAK SO-8 |
|
IRF7706TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 7A 8TSSOP |
|
BSP149 E6906IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
RJK0603DPN-A0#T2Renesas Electronics America |
MOSFET N-CH 60V 80A TO220ABA |
|
PSMN005-55P,127NXP Semiconductors |
MOSFET N-CH 55V 75A TO220AB |
|
SI1300BDL-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 400MA SC70-3 |
|
FDD16AN08A0-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 9A/50A TO252AA |
|
AOB2618LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 7A/23A TO263 |
|
STB8NM60NSTMicroelectronics |
MOSFET N-CH 600V 7A D2PAK |
|
FDV304P_NB8U003Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 25V 460MA SOT-23 |
|
SPU04N60S5BKMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 4.5A TO251-3 |