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IRF6629TR1PBF

IRF6629TR1PBF

Image is for reference, please contact us to get the real picture

Part No :

IRF6629TR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 29A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
841384 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2025
PDF
IRF6629TR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4260 pF @ 13 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 100W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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