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IPB80N06S2L07ATMA1

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Part No :: IPB80N06S2L07ATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 55V 80A TO263-3

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 731073 pieces

Shipped from: HK warehouse

Expected Shipping Date: Nov 01 - Nov 05 2025

PDF: IPB80N06S2L07ATMA1 PDF

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	6.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:	2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:	130 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3160 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	210W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3-2
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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