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BSC200P03LSGAUMA1

BSC200P03LSGAUMA1

MOSFET P-CH 30V 9.9/12.5A 8TDSON

BSC200P03LSGAUMA1

BSC200P03LSGAUMA1

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Part No :

BSC200P03LSGAUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 30V 9.9/12.5A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
851085 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2025
PDF
BSC200P03LSGAUMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.9A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:48.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2430 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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