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NVD20N03L27T4G

NVD20N03L27T4G

MOSFET N-CH 30V 20A DPAK

TCSD-05-D-88.00-01-N

TCSD-05-D-88.00-01-N

2MM DOUBLE ROW FEMALE IDC ASSEMB

NVD20N03L27T4G

NVD20N03L27T4G

Image is for reference, please contact us to get the real picture

Part No :

NVD20N03L27T4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 30V 20A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
611061 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2025
PDF
NVD20N03L27T4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:27mOhm @ 10A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1260 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.75W (Ta), 74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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