MOSFET N-CH 20V 67A TO262
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 7.9mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1220 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 57W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
NTD18N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A DPAK |
![]() |
MCH6436-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 6A 6MCPH |
![]() |
RSS085N05FU6TBROHM Semiconductor |
MOSFET N-CH 45V 8.5A 8SOP |
![]() |
IPU103N08N3 GIR (Infineon Technologies) |
MOSFET N-CH 80V 50A TO251-3 |
![]() |
IRL520SVishay / Siliconix |
MOSFET N-CH 100V 9.2A D2PAK |
![]() |
BSP135 E6327IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
![]() |
SI4858DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 13A 8SO |
![]() |
IXTA110N055PWickmann / Littelfuse |
MOSFET N-CH 55V 110A TO263 |
![]() |
STW16NK60ZSTMicroelectronics |
MOSFET N-CH 600V 14A TO247-3 |
![]() |
IRF7805ATRIR (Infineon Technologies) |
MOSFET N-CH 30V 13A 8SO |
![]() |
NVD20N03L27T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 20A DPAK |
![]() |
IRF7607IR (Infineon Technologies) |
MOSFET N-CH 20V 6.5A MICRO8 |
![]() |
SIR496DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 35A PPAK SO-8 |