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IRF630NS

IRF630NS

MOSFET N-CH 200V 9.3A D2PAK

IRF630NS

IRF630NS

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Part No :

IRF630NS

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 9.3A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
330833 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 05 - Mar 09 2025
PDF
IRF630NS PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:575 pF @ 25 V
FET Feature:-
Power Dissipation (Max):82W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF630NS is available at GangBo-ic.com, Please review product page below for detailed information, including IRF630NS price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF630NS to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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