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FQB34P10TM-F085

FQB34P10TM-F085

MOSFET P-CH 100V 33.5A D2PAK

FQB34P10TM-F085

FQB34P10TM-F085

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Part No :

FQB34P10TM-F085

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 100V 33.5A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
380838 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 05 - Mar 09 2025
PDF
FQB34P10TM-F085 PDF
Type Description
Series:Automotive, AEC-Q101, QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 16.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2910 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 155W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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