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IRF1010EZS

IRF1010EZS

MOSFET N-CH 60V 75A D2PAK

IRF1010EZS

IRF1010EZS

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Part No :

IRF1010EZS

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 75A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
380738 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 04 - Mar 08 2025
PDF
IRF1010EZS PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 51A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2810 pF @ 25 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF1010EZS is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1010EZS price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1010EZS to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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