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MOSFET N-CH 55V 80A TO262-3

IPI80N06S3L06XK

IPI80N06S3L06XK

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Part No :

IPI80N06S3L06XK

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 80A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
460746 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 04 - Mar 08 2025
PDF
IPI80N06S3L06XK PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 56A, 10V
Vgs(th) (Max) @ Id:2.2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:196 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:9417 pF @ 25 V
FET Feature:-
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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