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IPB06N03LAT

IPB06N03LAT

MOSFET N-CH 25V 50A TO263-3

IPB06N03LAT

IPB06N03LAT

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Part No :

IPB06N03LAT

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 50A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
990499 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPB06N03LAT PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2653 pF @ 15 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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