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FQI6N15TU

FQI6N15TU

MOSFET N-CH 150V 6.4A I2PAK

FQI6N15TU

FQI6N15TU

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Part No :

FQI6N15TU

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 150V 6.4A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
PDF
FQI6N15TU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:6.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FQI6N15TU is available at GangBo-ic.com, Please review product page below for detailed information, including FQI6N15TU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI6N15TU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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