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SI1403CDL-T1-GE3

SI1403CDL-T1-GE3

MOSFET P-CH 20V 2.1A SC70-6

NCID9211

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HIGH SPEED DUAL-CHANNEL, BI-DIRE

SI1403CDL-T1-GE3

SI1403CDL-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI1403CDL-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 2.1A SC70-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
550455 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
SI1403CDL-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:140mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:281 pF @ 10 V
FET Feature:-
Power Dissipation (Max):600mW (Ta), 900mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-70-6 (SOT-363)
Package / Case:6-TSSOP, SC-88, SOT-363
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