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IPB65R280E6ATMA1

IPB65R280E6ATMA1

MOSFET N-CH 650V 13.8A D2PAK

IPB65R280E6ATMA1

IPB65R280E6ATMA1

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Part No :

IPB65R280E6ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 13.8A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
370337 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 28 - Oct 02 2024
PDF
IPB65R280E6ATMA1 PDF
Type Description
Series:CoolMOS™ E6
Package:Tape & Reel (TR)
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 100 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB65R280E6ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB65R280E6ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB65R280E6ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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