MOSFET N-CH 40V 29A 5DFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 113 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5880 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.8W (Ta), 158W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQD7N30TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 5.5A DPAK |
|
IRFSL4610IR (Infineon Technologies) |
MOSFET N-CH 100V 73A TO262 |
|
RJK0851DPB-00#J5Renesas Electronics America |
MOSFET N-CH 80V 20A LFPAK |
|
SI4398DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 19A 8SO |
|
BSB053N03LP GIR (Infineon Technologies) |
MOSFET N-CH 30V 17A/71A 2WDSON |
|
STH110N7F6-2STMicroelectronics |
MOSFET N-CH 68V 80A H2PAK-2 |
|
FDD4243-F085PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 14A TO252 |
|
BUK7905-40ATE,127Nexperia |
MOSFET N-CH 40V 75A TO220-5 |
|
IRF7433IR (Infineon Technologies) |
MOSFET P-CH 12V 8.9A 8SO |
|
2N7002WT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 310MA SC70-3 |
|
SUD50N03-16P-GE3Vishay / Siliconix |
MOSFET N-CH 30V TO252 |
|
ZVP3310FTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 75MA SOT23-3 |
|
APT6017B2LLGMicrosemi |
MOSFET N-CH 600V 35A T-MAX |