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IRF5806

IRF5806

MOSFET P-CH 20V 4A MICRO6

IRF5806

IRF5806

Image is for reference, please contact us to get the real picture

Part No :

IRF5806

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 20V 4A MICRO6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
020302 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IRF5806 PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:86mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.4 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:594 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro6™(TSOP-6)
Package / Case:SOT-23-6 Thin, TSOT-23-6
IRF5806 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF5806 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF5806 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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