MOSFET N-CH 60V 7A 8SO
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 26mOhm @ 4.2A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1740 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI4384DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 10A 8SO |
|
NTD15N06T4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A DPAK |
|
IRFHM4231TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 40A 8PQFN |
|
IRF3707ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |
|
2SK2962,T6F(MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH TO92MOD |
|
TPC6109-H(TE85L,FMToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 5A VS-6 |
|
IRFR5305TRRPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 31A DPAK |
|
IXFN24N100FWickmann / Littelfuse |
MOSFET N-CH 1000V 24A SOT227B |
|
IRF7467TRIR (Infineon Technologies) |
MOSFET N-CH 30V 11A 8SO |
|
FQP3N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 3A TO220-3 |
|
RJK0629DPE-00#J3Renesas Electronics America |
MOSFET N-CH 60V 85A 4LDPAK |
|
AO4435_102Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 10.5A 8SO |
|
PH1730AL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |