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ISP25DP06LMSATMA1

ISP25DP06LMSATMA1

MOSFET P-CH 60V 1.9A SOT223

ISP25DP06LMSATMA1

ISP25DP06LMSATMA1

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Part No :

ISP25DP06LMSATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 1.9A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
620162 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:13.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 30 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta), 5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
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