MOSFET N-CH 40V 120A D2PAK
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 230µA |
Gate Charge (Qg) (Max) @ Vgs: | 210 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 14300 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
FDS8812NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 20A 8SOIC |
![]() |
HCT7000MTXVTT Electronics / Optek Technology |
MOSFET N-CH 60V 200MA 3SMD |
![]() |
IPA126N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO220-FP |
![]() |
EPC2001EPC |
GANFET N-CH 100V 25A DIE OUTLINE |
![]() |
NP22N055SLE-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 22A TO252 |
![]() |
BUK9635-100A,118NXP Semiconductors |
MOSFET N-CH 100V 41A D2PAK |
![]() |
IRFSL4228PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 83A TO262 |
![]() |
AO4407AL_102Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 12A 8SOIC |
![]() |
IXTH200N075TWickmann / Littelfuse |
MOSFET N-CH 75V 200A TO247 |
![]() |
FQPF10N60C_F105Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9.5A TO220F |
![]() |
IRFBF30SVishay / Siliconix |
MOSFET N-CH 900V 3.6A D2PAK |
![]() |
AON4407LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 12V 9A 8DFN |
![]() |
STD85N3LH5STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |