GANFET N-CH 100V 25A DIE OUTLINE
Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 7mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 10 nC @ 5 V |
Vgs (Max): | +6V, -5V |
Input Capacitance (Ciss) (Max) @ Vds: | 950 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die Outline (11-Solder Bar) |
Package / Case: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NP22N055SLE-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 22A TO252 |
|
BUK9635-100A,118NXP Semiconductors |
MOSFET N-CH 100V 41A D2PAK |
|
IRFSL4228PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 83A TO262 |
|
AO4407AL_102Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 12A 8SOIC |
|
IXTH200N075TWickmann / Littelfuse |
MOSFET N-CH 75V 200A TO247 |
|
FQPF10N60C_F105Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9.5A TO220F |
|
IRFBF30SVishay / Siliconix |
MOSFET N-CH 900V 3.6A D2PAK |
|
AON4407LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 12V 9A 8DFN |
|
STD85N3LH5STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
|
NTD32N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 32A DPAK |
|
AON6450LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8DFN |
|
IPP35CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 27A TO220-3 |
|
AOT5N50_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 5A TO220-3 |