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IPD10N03LA

IPD10N03LA

MOSFET N-CH 25V 30A TO252-3

IPD10N03LA

IPD10N03LA

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Part No :

IPD10N03LA

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 30A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
609360 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 04 - Mar 08 2025
PDF
IPD10N03LA PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1358 pF @ 15 V
FET Feature:-
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD10N03LA is available at GangBo-ic.com, Please review product page below for detailed information, including IPD10N03LA price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD10N03LA to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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