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IRF3711L

IRF3711L

MOSFET N-CH 20V 110A TO262

IRF3711L

IRF3711L

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Part No :

IRF3711L

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 20V 110A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
689368 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 04 - Mar 08 2025
PDF
IRF3711L PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2980 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRF3711L is available at GangBo-ic.com, Please review product page below for detailed information, including IRF3711L price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF3711L to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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