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FQP6N60C_F080

FQP6N60C_F080

MOSFET N-CH 600V 5.5A TO220-3

FQP6N60C_F080

FQP6N60C_F080

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Part No :

FQP6N60C_F080

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 5.5A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
439143 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 22 - Jul 26 2025
PDF
FQP6N60C_F080 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:810 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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