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IPS110N12N3GBKMA1

IPS110N12N3GBKMA1

MOSFET N-CH 120V 75A TO251-3

IPS110N12N3GBKMA1

IPS110N12N3GBKMA1

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Part No :

IPS110N12N3GBKMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 120V 75A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
459145 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
PDF
IPS110N12N3GBKMA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4310 pF @ 60 V
FET Feature:-
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak
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