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SI1413EDH-T1-GE3

SI1413EDH-T1-GE3

MOSFET P-CH 20V 2.3A SC70-6

SI1413EDH-T1-GE3

SI1413EDH-T1-GE3

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Part No :

SI1413EDH-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 2.3A SC70-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
988998 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
SI1413EDH-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:115mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:450mV @ 100µA (Min)
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-70-6 (SOT-363)
Package / Case:6-TSSOP, SC-88, SOT-363
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