MOSFET N-CH 1000V 12A TO268
Type | Description |
---|---|
Series: | HiPerRF™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.05Ohm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 77 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2700 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 (IXFT) |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SI3446ADV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 6A 6TSOP |
![]() |
SIHF22N60S-E3Vishay / Siliconix |
MOSFET N-CH 600V 22A TO220 |
![]() |
IXTT10P50Wickmann / Littelfuse |
MOSFET P-CH 500V 10A TO268 |
![]() |
ZXMN6A09KTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 7.7A TO252-3 |
![]() |
STE250NS10STMicroelectronics |
MOSFET N-CH 100V 220A ISOTOP |
![]() |
IPU09N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO251-3 |
![]() |
IRF3711ZCSTRLPIR (Infineon Technologies) |
MOSFET N-CH 20V 92A D2PAK |
![]() |
STD70N02LSTMicroelectronics |
MOSFET N-CH 25V 60A DPAK |
![]() |
SPI35N10IR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO262-3 |
![]() |
AO3421LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 2.6A SOT23-3L |
![]() |
AO3495Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 5A SOT23-3 |
![]() |
SIJ400DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 32A PPAK SO-8 |
![]() |
FQD3P50TFSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 2.1A DPAK |