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SQP120N06-6M7_GE3

SQP120N06-6M7_GE3

MOSFET N-CH 60V TO220AB

IDSD-15-D-05.60

IDSD-15-D-05.60

INSULATION DISPLACEMENT TERMINAL

SQP120N06-6M7_GE3

SQP120N06-6M7_GE3

Image is for reference, please contact us to get the real picture

Part No :

SQP120N06-6M7_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10439 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 01 - Nov 05 2025
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:119A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3 Full Pack
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