







 
                            MOSFET N-CH 1000V 7A TO247
| Type | Description | 
|---|---|
| Series: | HiPerFET™, Polar™ | 
| Package: | Tube | 
| Part Status: | Active | 
| FET Type: | N-Channel | 
| Technology: | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss): | 1000 V | 
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On): | 10V | 
| Rds On (Max) @ Id, Vgs: | 1.9Ohm @ 3.5A, 10V | 
| Vgs(th) (Max) @ Id: | 6V @ 1mA | 
| Gate Charge (Qg) (Max) @ Vgs: | 47 nC @ 10 V | 
| Vgs (Max): | ±30V | 
| Input Capacitance (Ciss) (Max) @ Vds: | 2590 pF @ 25 V | 
| FET Feature: | - | 
| Power Dissipation (Max): | 300W (Tc) | 
| Operating Temperature: | -55°C ~ 150°C (TJ) | 
| Mounting Type: | Through Hole | 
| Supplier Device Package: | TO-247 | 
| Package / Case: | TO-247-3 | 
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|   | NVTFS4824NTWGSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 30V 18.2A 8WDFN | 
|   | IRLS3036TRRPBFIR (Infineon Technologies) | MOSFET N-CH 60V 195A D2PAK | 
|   | SIE832DF-T1-E3Vishay / Siliconix | MOSFET N-CH 40V 50A 10POLARPAK | 
|   | FDN360P-NBGT003BSanyo Semiconductor/ON Semiconductor | MOSFET P-CH 30V 2A SOT23-3 | 
|   | IPU60R950C6BKMA1IR (Infineon Technologies) | MOSFET N-CH 600V 4.4A TO251-3 | 
|   | IRL3705NLIR (Infineon Technologies) | MOSFET N-CH 55V 89A TO262 | 
|   | IXTH72N20Wickmann / Littelfuse | MOSFET N-CH 200V 72A TO247 | 
|   | AON6782Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 30V 24A/85A 8DFN | 
|   | SIE806DF-T1-GE3Vishay / Siliconix | MOSFET N-CH 30V 60A 10POLARPAK | 
|   | SUM27N20-78-E3Vishay / Siliconix | MOSFET N-CH 200V 27A TO263 | 
|   | IRFS7440PBFIR (Infineon Technologies) | MOSFET N CH 40V 120A D2PAK | 
|   | APT130SM70BMicrosemi | SICFET N-CH 700V 110A TO247-3 | 
|   | SI1450DH-T1-E3Vishay / Siliconix | MOSFET N-CH 8V 4.53A/6.04A SC70 |